SK hynix mass-produces 238-layer 4D NAND flash memory
SK Hynix has announced the commencement of mass production of their 238-layer 4D NAND flash memory. Currently, the company is undergoing product validation with international smartphone manufacturing clientele. SK Hynix emphasized that they have developed client SSD solution products suited for smartphones and PCs based on this technology, assuring competitive advantages in cost, performance, and quality. The company anticipates these advancements to improve its financial performance in the latter half of this year.
As early as August of last year, SK Hynix announced the successful development of the world’s first 238-layer NAND flash memory, the highest number of layers in the industry, and sent 238-layer 512Gb TLC 4D NAND flash memory samples to their partners. Compared to the 3D approach, SK Hynix’s 4D architecture chips employ Charge Trap Flash (CTF) and Peri. Under Cell (PUC) technologies, offer reduced unit size and heightened production efficiency.
The 238-layer 4D NAND flash memory is the smallest chip globally, and its production efficiency, improved by 34% compared to the previous generation’s 176-layer technology, greatly enhances cost competitiveness. Its data transfer rate is 2.4Gbps, a 50% increase from its predecessor, and the chip’s read-write performance has also improved by approximately 20%.
Following the completion of smartphone client validation, SK Hynix plans to first supply 238-layer NAND flash memory to mobile devices before expanding its applicability to PC platform SSDs based on the PCIe 5.0 standard and high-capacity SSD products for data centers. SK Hynix expressed its intention to continue pushing the boundaries of NAND flash memory technology and bolster its competitive edge.
