Samsung launches 12nm-Class 32Gb DDR5 DRAM

Samsung has unveiled the industry’s pioneering and highest-capacity 12nm-class 32Gb DDR5 DRAM. This launch, succeeding Samsung’s initiation of mass-producing 12nm-class 16Gb DDR5 DRAM earlier this May, broadens its 12nm-class DRAM product suite, offering double the capacity within the same package dimensions. Samsung asserts that this move fortifies its vanguard position in the arena of next-generation DRAM technologies, heralding a new epoch for large-capacity memory modules.

“With our 12nm-class 32Gb DRAM, we have secured a solution that will enable DRAM modules of up to 1-terabyte (TB), allowing us to be ideally positioned to serve the growing need for high-capacity DRAM in the era of AI (Artificial Intelligence) and big data,” said SangJoon Hwang, Executive Vice President of DRAM Product & Technology at Samsung Electronics. “We will continue to develop DRAM solutions through differentiated process and design technologies to break the boundaries of memory technology.”

In its 12nm-class technology, Samsung has incorporated an avant-garde high-κ material, bolstering battery capacitance. Elevated capacitance results in pronounced potential differences in data signals, facilitating accurate distinction. Samsung’s relentless endeavors to mitigate operational voltage and curtail noise further amplify its capability to proffer solutions tailored to client requisites.

While Samsung’s previous 12nm-class 32Gb DDR5 DRAM necessitated the TSV (Through Silicon Via) technique, the current 12nm-class 32Gb DDR5 DRAM is manufacturable without resorting to TSV technology. When juxtaposed, both being 128GB modules, the latter exhibits a power consumption reduction of approximately 10%. This attribute renders it the optimal solution for enterprises like data centers that prioritize energy efficiency.

Samsung has intimated that the 12nm-class 32Gb DDR5 DRAM will commence mass production by the close of this year.