Samsung is developing the industry’s first 5-nanometer eMRAM

At the recent 2023 Samsung Foundry Forum (SFF) held in Munich, Germany, Samsung unveiled and elucidated its automotive process solutions.

Samsung conveyed its commitment to spearhead innovations in next-generation solutions, aiming to cultivate an expansive product portfolio to satiate the escalating demands of its automotive clientele, particularly as the era of electric vehicles dawns. Presently, Samsung is amplifying its preparatory efforts to offer a plethora of solutions to its customers, ranging from power semiconductors and microcontrollers to advanced artificial intelligence chips for autonomous driving.

Since the inception and mass production of the industry’s maiden 28nm FD-SOI1 type eMRAM in 2019, Samsung has been ardently developing a 14nm process predicated on FinFET transistor technology compliant with AEC-Q100 Grade 1. According to Samsung’s revealed roadmap, there are plans to mass-produce 14nm automotive eMRAM in 2024, succeeded by the production of 8nm and 5nm automotive eMRAM in 2026 and 2027, respectively. In comparison to the 14nm products, the 8nm iteration holds the potential to augment density and velocity by 33% respectively. Additionally, Samsung envisages completing the preparatory work for mass-producing a 2nm automotive process by 2026.

Concurrently, Samsung has broadened its 8-inch BCD process suite, traditionally employed for power semiconductor production, to meet client requisites. Samsung aspires, by 2025, to enhance the current 130mm automotive BCD process to 90nm. Relative to the 130nm process, the 90nm BCD process is anticipated to curtail chip area by 20%. Furthermore, through the integration of Deep Trench Isolation (DTI) technology, Samsung aims to diminish the spacing between individual transistors, maximizing the performance of power semiconductors.