Samsung announced the development of the industry’s first 12nm DDR5 DRAM

Samsung announced that they have developed 16-gigabit (Gb) DDR5 DRAM based on the industry’s first 12nm process, and passed AMD’s compatibility evaluation at the same time. This 12nm DDR5 DRAM has a speed of up to 7.2Gbps, while power consumption has dropped by 23% compared to the previous generation. For those IT companies pursuing environmental protection, choosing this DRAM will be an ideal solution.

Our 12nm-range DRAM will be a key enabler in driving market-wide adoption of DDR5 DRAM,” said Jooyoung Lee, Executive Vice President of DRAM Product & Technology at Samsung Electronics. “With exceptional performance and power efficiency, we expect our new DRAM to serve as the foundation for more sustainable operations in areas such as next-generation computing, data centers and AI-driven systems.

Innovation often requires close collaboration with industry partners to push the bounds of technology,” said Joe Macri, Senior VP, Corporate Fellow and Client, Compute and Graphics CTO at AMD. “We are thrilled to once again collaborate with Samsung, particularly on introducing DDR5 memory products that are optimized and validated on ‘Zen’ platforms.

This technological innovation is mainly attributed to the adoption of new high-κ materials, the design of improved key circuit characteristics, and EUV lithography technology, which greatly increased the chip density of DRAM and increased the efficiency of wafer production by 20%.
Mass production of this product will start in 2023, and Samsung is planning to expand it to a wider market and work with industry partners such as AMD to put more advanced memory into the rapid expansion of next-generation computers.