Micron announces mass production of 232-layer QLC NAND flash memory

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Micron has announced the commencement of mass production of its 232-layer QLC NAND flash memory, which has already begun shipping in select key SSDs. In addition to consumer client products, the company will also provide corresponding products to enterprise storage customers and OEM manufacturers, such as the Micron 2500 NVMe SSD.

Micron states that this new four-level cell NAND flash memory is a groundbreaking achievement, offering unprecedented layer count and density. This innovation enhances storage density and design flexibility over previous NAND technologies and reduces access times. Micron’s 232-layer QLC NAND flash memory delivers unparalleled performance for mobile, client, automotive, edge, and data center storage applications by leveraging key features, including:

  • The highest global bit density of any OEM-produced NAND flash, achieving a 30% increase over its previous generation 176-layer QLC NAND.
  • Industry-leading bit density that surpasses that of competitors’ latest products, achieving a compact structure with a 28% improvement.
  • The fastest NAND flash I/O interface speed in the industry, reaching 2400 MT/s, a 50% increase over the previous generation.
  • A 24% improvement in read performance and a 31% increase in write performance compared to the previous generation 176-layer QLC NAND.

Bill Cerreta, General Manager of storage solutions and custom enterprise SSD manufacturer Pure Storage, remarked that Micron’s 232-layer QLC NAND flash is crucial for their high-capacity DirectFlash modules. With Micron’s advancements, Pure Storage is poised to achieve its goal of replacing all mechanical hard drives in data centers by 2028.

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