Samsung Eyes MUF Upgrade for Next-Gen DRAM

According to a report by The Elec, Samsung is contemplating the incorporation of Molded Underfill (MUF) technology in its next-generation DRAM. The company has recently conducted extensive testing of the MR MUF process on 3D Stacked (3DS) memory, revealing that while throughput has improved in comparison to the existing Thermal Compression Non-Conductive Film (TC NCF), physical properties have seen a decline.

It is rumored that a senior executive in Samsung’s chip division mandated the evaluation of MUF technology last year, concluding that MUF is ill-suited for high-bandwidth memory products, such as HBM, but is ideally applicable to 3DS RDIMMs. Typically, 3DS RDIMMs are manufactured using Through-Silicon Via (TSV) technology, primarily for server products. TSV technology involves drilling thousands of microscopic holes in the Wafer or Die to create vertical interconnect access channels for stacking silicon pieces. MUF, on the other hand, serves as a bonding material that reduces gaps between connections, aiding in the solidification and fusion of various vertically stacked semiconductors.

MUF is an epoxy molding compound that garnered industry attention after SK Hynix successfully applied it to the production of HBM2E, in collaboration with Namics. Samsung plans to develop its own MUF compound in partnership with SDI and has already ordered the necessary equipment from Japan, indicating a move towards the next phase to achieve more advanced packaging processes and enhance production efficiency.

Despite these advancements, Samsung intends to continue using TC NCF in the production of HBM, a strategy also adopted by its competitor Micron. MUF materials are considered to have superior advantages in preventing wafer warping.