Next-Level Performance: Samsung & Arm Optimize Cortex-X

Samsung has announced a collaboration with Arm to harness the latest Gate-All-Around (GAA) transistor architecture, aiming to optimize the next generation of Arm Cortex-X CPUs. This partnership is set to elevate performance and efficiency to unprecedented levels, thereby enriching the user experience significantly.

This initiative is built upon a foundation of cooperation that spans several years and millions of devices powered by Arm CPU Intellectual Property (IP), which have utilized a variety of process nodes offered by Samsung. Both entities are confident that this series of announcements and plans will lay the groundwork for innovation. They have outlined audacious strategies to provide 2nm GAA technology for custom chips in next-generation data centers and infrastructure, along with groundbreaking artificial intelligence (AI) chip solutions poised to revolutionize the future AI mobile computing market.

In June 2022, Samsung commenced mass production of its SF3E (3nm GAA) technology, introducing a novel GAA transistor architecture. Plans for 2024 include the rollout of a second-generation 3nm process technology named SF3 (3GAP), utilizing “Second-Generation Multi-Bridge-Channel FETs (MBCFET)” for further enhancements over the SF3E. This will be followed by an even more performance-optimized SF3P (3GAP+), better suited for manufacturing high-performance chips. By 2025, Samsung aims to begin mass production of the SF2 (2nm) process.

GAA technology offers a significant advancement over the previous FinFET architecture by enabling further scaling of devices. It improves power efficiency by lowering power voltage levels and boosts performance through enhanced drive current capabilities. The implementation of GAA with a nanosheet structure provides the utmost design flexibility and scalability.