Micron launches new LPDDR5X: The rate is 9.6Gbps, using 1β process, supporting Snapdragon 8 Gen 3

Micron has announced the release of its LPDDR5X memory, produced using the latest 1-beta process node. This memory boasts a capacity of up to 16GB and reaches speeds of 9.6 Gbps, marking a 12% increase in peak bandwidth compared to its predecessor. Additionally, it offers sophisticated power-saving features. Presently, this variant of the LPDDR5X has commenced sample deliveries and is set to be paired with Qualcomm’s newest third-generation Snapdragon 8 mobile platform, enhancing the mobile ecosystem with the performance required for edge-deployed generative artificial intelligence (AI).

“Generative AI is poised to unleash unprecedented productivity, ease of use, and personalization for smartphone users by delivering the power of large language models to flagship mobile phones,” said Mark Montierth, corporate vice president and general manager of Micron’s Mobile Business Unit. “Micron’s 1β LPDDR5X combined with Qualcomm Technologies’ AI-optimized Snapdragon 8 Gen 3 Mobile Platform empowers smartphone manufacturers with the next-generation performance and power efficiency essential to enabling revolutionary AI technology at the edge.”

Micron introduced the 1-beta process node last year, allowing the LPDDR5X to offer the industry’s most cutting-edge energy-saving features, such as enhanced dynamic voltage technologies, delivering nearly a 30% improvement in energy efficiency. This flexibility provides tailored power and performance for workloads. Micron emphasized that these energy-saving measures are especially crucial for energy-intensive, AI-driven applications, enabling users to enjoy the benefits of generative AI while prolonging battery life.