Intel 20A/18A plans to enter the risk production stage in 2024
According to Intel’s new version of the process roadmap, the Intel 20A process node will start a new era with the two breakthrough technologies of RibbonFET and PowerVias. Among them, RibbonFET is the implementation of Gate All Around transistors, which will become Intel’s first new transistor architecture since the launch of FinFET in 2011. PowerVia is Intel’s unique and the industry’s first backside power delivery network that optimizes signal delivery by eliminating the need for power routing on the front side of the wafer.
Ann B Kelleher, Intel’s general manager of technology development, said, “Moore’s Law is about increasing the integration of functions. As we look forward into the next 10 to 20 years, there’s a pipeline full of innovation.”
When asked about the upcoming technological transition to RibbonFET and PowerVias on the 20A process, and the potential risk involved considering the company’s missteps with the 10nm process, Ann Kelleher had the following to say:
“They do not have to be done at once, but we see significant benefits from moving to PowerVia to enable the [RibbonFET] technology,….That has been working very successfully and it has enabled us to accelerate our development work,” – Ann B Kelleher, General Manager of Technology Development, Intel. Source: IEEE