SK hynix announced the development of the 238-layer NAND flash memory

SK hynix announced that it has successfully developed the world’s first 238-layer NAND flash memory with the highest number of layers in the industry. SK hynix has sent samples of 238-layer 512Gb TLC 4D NAND flash memory to partners and plans to officially put it into mass production in the first half of 2023. At the 2022 Global Flash Memory Summit held recently, this 238-layer NAND flash memory also made its debut.

The 238-layer NAND flash memory has reached the industry’s highest number of stack layers while achieving the industry’s smallest area. The smaller area enables it to produce more chips on the same size wafer, which is 34% more efficient than a 176-layer NAND flash. In addition, the data transfer rate of this 238-layer NAND flash memory is 2.4Gbps, which is 50% higher than that of the previous generation. The chip’s energy consumption when reading data is also reduced by 21%.
The company unveiled the development of the latest product at the Flash Memory Summit 2022 in Santa Clara. “SK hynix secured global top-tier competitiveness in perspective of cost, performance and quality by introducing the 238-layer product based on its 4D NAND technologies,” said Jungdal Choi, Head of NAND Development at SK hynix in his keynote speech during the event. “We will continue innovations to find breakthroughs in technological challenges.”