Samsung is preparing to launch 512GB DDR5 memory

by ·

At the Hot Chips 33 conference, Samsung announced that they are developing DDR5 memory with an 8-layer TSV package, and now Samsung’s DDR4 is packaged with a 4-layer TSV, which makes the capacity of DDR5 memory twice that of DDR4. In the future, a single 512GB DDR5 will become possible.

According to a report from Computerbase, Samsung has reduced the gap between chips by 40% by optimizing packaging and using thin wafer technology. This makes the DDR5 height of the 8-layer TSV package actually lower than the 4-layer DDR4, and it also brings better heat dissipation.

The capacity of DDR5 memory can reach 512GB, which is a huge improvement compared with DDR4. At present, DDR4 memory for the server market can be up to 256GB per root, while the consumer market is up to 64GB and 32GB.

Samsung expects that DDR5 memory will increase performance by 85% than DDR4, provide 7.2Gbps bandwidth, and have twice the capacity, and the voltage of the DDR5 memory module is only 1.1V, which makes it more energy-efficient to work.

Of course, Samsung’s 512GB refers to server memory, and the general consumer market does not need to expect the single-root memory capacity to exceed 64GB soon.
Samsung predicts that the mainstream market will not transition to DDR5 until 2023 or 2024, and the data center market will shift faster, so Samsung plans to produce 512GB DDR5-7200 memory modules by the end of this year.

Tags: