Samsung is developing 36Gbps GDDR7 DRAM
Image: Samsung
Samsung said that by 2027, the proportion of HPC, automotive, and 5G chips will exceed 50%, and it plans to target the high-performance and low-power semiconductor market and more than triple the production capacity of advanced process nodes. Samsung will enhance its GAA-based 3nm process for chips used in HPC and mobile devices. At present, Samsung provides 28nm eNVM solutions for automotive-grade chips and plans to advance to 14nm eNVM solutions in 2024, and there will be 8nm eNVM solutions in the future. In terms of RF chips, following the 14nm process, there will be an 8nm process, and a 5nm process is also under development.
In the DRAM space, Samsung announced that its latest fifth-generation 10nm-class (1b) chips will begin mass shipments by 2023, and conduct exploratory research into sub-10nm-class DRAM manufacturing, which requires new designs and materials. Samsung is ahead of most of its competitors in this regard, and currently generally manufactures DRAM chips on the 14nm process node. In addition, GDDR7 under development by Samsung will be a booster for future GPUs, with a speed of 36 Gbps, which is double the existing GDDR6 of 18 Gbps.
