Samsung expects to advance 1.4nm process technology in 2027

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At the Samsung Foundry Forum in California, Samsung announced that it will advance its process technology to the 1.4nm specification in the next five years, and expects to expand its production capacity for the advanced nodes by more than 3X by 2027.

 

Image: Samsung

Samsung has announced that its 3nm process foundry chip products have officially shipped, and emphasized that it leads other competitors to achieve mass production of 3nm process technology. “The technology development goal down to 1.4nm and foundry platforms specialized for each application, together with stable supply through consistent investment are all part of Samsung’s strategies to secure customers’ trust and support their success,” said Dr. Si-young Choi, president and head of Foundry Business at Samsung Electronics. “Realizing every customer’s innovations with our partners has been at the core of our foundry service.”

In addition to planning to enter the 1.4nm process technology development in 2027, Samsung also announced that it will strengthen its gate-all-around (GAA) technology. In the second-generation design, the transistor size will be reduced by 20% compared to the first-generation design, thereby placing more electrical transistors in the wafer area, while also improving the operating efficiency per unit power of the wafer.

In addition, Samsung also revealed that it will put the 2nm process technology into mass production in 2025, thereby improving the wafer mass production capacity.

At present, Samsung also plans to actively strive for the foundry market in the United States. In addition to the factory in Austin, Texas, it also plans to build a new factory in the nearby city of Taylor, which is expected to start operation in 2024 and plans to provide foundry mass production resources with the latest 3nm process technology.

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