Samsung builds new semiconductor R&D center
Samsung announced that it will establish a new semiconductor research and development center in the Giheung complex in Korea, aiming to expand its leadership in advanced semiconductor technology. Many senior executives, including Samsung Electronics Vice Chairman Jay Y. Lee, President and CEO Kye Hyun Kyung, President of the Memory Business Jung-Bae Lee, President of the Foundry Business Siyoung Choi and President of the S.LSI Business Yong-In Park, and more than 100 Samsung employees attended the groundbreaking ceremony of the new semiconductor R&D center.
Samsung plans to invest about 20 trillion won in an area of 109,000 square meters on the Giheung campus by 2028, mainly responsible for memory, system semiconductor, and semiconductor process research, as well as innovative technology development based on long-term roadmaps.
“Our new state-of-the-art R&D complex will become a hub for innovation where the best research talent from around the world can come and grow together,” said President Kye Hyun Kyung, who also heads the Device Solutions (DS) Division. “We expect this new beginning will lay the foundation for sustainable growth of our semiconductor business.”
The Giheung campus is located in the south of Seoul, close to the DS Division’s Hwaseong campus where the current GAA 3nm production line is located. The world’s first 64Mb DRAM was born here in 1992, marking the beginning of Samsung’s leadership in the semiconductor industry.
