Rambus expects to have faster GDDR6 mass production by the end of this year

Last year, Samsung began offering the industry’s first 16Gb (2GB) GDDR6 memory modules, boasting a speed of 24 Gbps. These modules, fabricated using Samsung’s 10nm-class 1z process technology, encompass innovative circuit design, advanced insulating material (HKMG), and extreme ultraviolet (EUV) technology. They come equipped with dynamic voltage scaling (DVS) technology, which adjusts the working voltage based on performance requirements, enhancing power efficiency by 20%. Their objective is to amplify the graphical performance of next-generation graphics cards, laptops, and gaming consoles. They also find applications in artificial intelligence-based applications and high-performance computing (HPC) systems.

According to a report by Twitter user Hassan Mujtaba, Rambus expects faster GDDR6 to go into production by the end of this year, reaching speeds of 24 Gbps.

Historically, GDDR6X has consistently boasted higher speeds compared to GDDR6. Micron began mass production of 24 Gbps GDDR6X last year, with a 16Gb module capacity. Currently, the GDDR6X memory used in the GeForce RTX 4080 is MT61K512M32KPA-24. The rated speed itself should be 24 Gbps, but it is set at 22.4 Gbps.

With the speed of GDDR6 also reaching 24 Gbps, AMD may reap benefits, potentially appearing in the Radeon RX 7×50 series. It remains uncertain whether Nvidia will adopt it more widely in their products as the GDDR6 speed catches up. However, Micron has stated that the innovations in PAM4 signal transmission technology within GDDR6X make it more energy-efficient than other GDDR6 products.

Compared to Samsung and Micron, SK Hynix appears to have placed its emphasis on HBM class memory chips, currently offering only GDDR6 with a speed of 20 Gbps.