Samsung launched the first mass-produced 3D NAND memory, called V-NAND, in 2013, and is therefore ahead of its competitors. Samsung started with 24-layer V-NAND flash memory and gradually accumulated rich experience. It is expected to launch storage devices equipped with 176-layer V-NAND flash memory in the near future. Samsung said that the number of layers of V-NAND may exceed 1,000 in the future.
According to TomsHardware
, Samsung plans to start producing consumer solid-state hard drives with seventh-generation V-NAND technology, with 176 layers. Samsung said this is the smallest NAND storage unit in the industry. This new flash memory will have a data transfer rate of 2000 MT/s, allowing Samsung to build ultra-high-speed solid-state drives with PCI-E 4.0 and PCI-E 5.0 interfaces. These storage devices will use a brand-new main control chip, which will be optimized for multi-tasking and heavy workloads. In the next step, Samsung will launch a data center-level solid-state drive based on 176-layer V-NAND flash memory, which will have stronger performance and capacity.
Although the 176-layer V-NAND flash memory is close to mass production, Samsung has begun to manufacture chip samples using the eighth-generation V-NAND technology, and the next-generation product will have 200 layers. Samsung said that it will decide when to start mass production based on market demand. Generally, it will be updated in 12 to 18 months. With reference to this timetable, it can be roughly judged when the storage device equipped with 200-layer V-NAND flash memory will come out.
Samsung and other NAND flash memory manufacturers will face several challenges in the pursuit of the number of layers, including the smaller NAND memory cell, the need to use new materials. SK Hynix said earlier this year that it will advance the research and development of 3D NAND flash memory with more than 600 layers as planned, so Samsung is not the only company that has made plans in this regard.