Samsung supplies HKMG DDR5 DRAM to G.SKILL
Samsung launched the industry’s first DDR5 memory with a single capacity of 512GB in March last year, using High-K Metal Gate (HKMG) DDR5 memory particles to reduce the leakage rate. It uses TSV through silicon technology to achieve 8-layer stacking to ensure low power consumption and high-quality signal transmission, and the capacity of a single DRAM chip is 16Gb.
According to TechInsights, Samsung HKMG DDR5 DRAM particles have been found in G.Skill Trident Z5 series DDR5 memory, and memory using HKMG technology is likely to become the new industry standard in the future. In addition to DDR5, Samsung has also applied GDDR6 and realized commercialization.
According to The Elec, Samsung’s P3 production line in Pyeongtaek, South Korea, has been put into operation recently and will mass-produce NAND flash memory chips. This is Samsung’s largest semiconductor production facility to date, with construction beginning in late 2020, equipped with EUV (Extreme Ultraviolet Lithography) equipment, it is designed to manufacture NAND flash memory, DRAM, and logic chips for Samsung’s foundry services. Meanwhile, Samsung has started preparations for the construction of a new P4 production line.
Kyung Kye-hyun, head of Samsung’s semiconductor business, said that the company will continue to invest in semiconductor production facilities in the future and will not rely on semiconductor market conditions. The new production line can reduce costs by 10%, which will lower the price at which products are sold.
