Samsung today
held a delivery ceremony for 3nm foundry products using the next-generation GAA (Gate-All-Around) architecture transistor technology at the V1 production line (EUV only) of the Hwaseong factory in Gyeonggi-do. More than 100 executives, government officials, supplier representatives, and Samsung employees attended the event, including Samsung Electronics Co-CEO and Head of Device Solutions Division Kyung Kye-hyun and South Korea’s Minister of Industry, Trade, and Resources Lee Chang-yang.
Samsung’s foundry division expressed its ambition to enhance the competitiveness of its business by preempting mass production of the 3nm GAA process, as well as its confidence that it “will continue to be the best in the world with innovative technologies.” In his congratulatory message, Lee Chang-yang expressed his gratitude to Samsung employees for their hard work in the semiconductor industry, saying that the government will spare no effort to support related investments, cultivate human resources and develop technologies, and build an ecosystem with the goal of “semiconductor superpower”.
Samsung began to study the architecture of GAA transistors more than ten years ago and applied it to the 3nm process in 2017, and finally announced mass production of the world’s first 3nm GAA process in June 2022. Samsung’s 3nm GAA process is initially aimed at high-performance computing (HPC) SoCs, and will later expand to various product portfolios including mobile SoCs.
At present, Samsung only mass-produces 3nm GAA chips in the Hwaseong factory and plans to expand to the Pyeongtaek factory in the future.
Samsung also opened a packaging solutions center in the U.S. this month and named former Apple expert Kim Woo-pyeong as director, Business Korea reported. He studied at the Korea Institute of Science and Technology, then went to work at Texas Instruments and Qualcomm, and has worked for Apple since 2014.
