Samsung announced the mass production of 12nm-class DDR5 DRAM

Samsung has announced the commencement of mass production for its 16Gb DDR5 DRAM which employs the industry’s state-of-the-art 12nm process technology. Samsung maintains that this completion of cutting-edge manufacturing techniques once again reaffirms its hegemony in the field of advanced DRAM technology.

“Using differentiated process technology, Samsung’s industry-leading 12nm-class DDR5 DRAM delivers outstanding performance and power efficiency,” said Jooyoung Lee, Executive Vice President of DRAM Product & Technology at Samsung Electronics. “Our latest DRAM reflects our continued commitment to leading the DRAM market, not only with high-performance and high-capacity products that meet computing market demand for large-scale processing but also by commercializing next-generation solutions that support greater productivity.”

In comparison to its predecessor, Samsung’s new 12nm-class DDR5 DRAM attains a speed of 7.2 Gbps, curtails power consumption by 23%, and simultaneously enhances wafer productivity by 20%. This exemplary power efficiency makes it an optimal solution for global IT firms striving to lessen the energy consumption and carbon footprint of their servers and data centers, thus supporting an ever-increasing spectrum of applications, inclusive of data centers, artificial intelligence, and next-gen computing.

Samsung utilizes a novel high-κ material in its 12nm process technology, which aids in augmenting the battery capacity. This heightened capacitance induces a conspicuous potential difference in data signals, rendering them more effortlessly distinguishable. Concurrent efforts to reduce operating voltage and diminish noise also contribute to Samsung’s proficiency in providing solutions tailored to customer needs.