Micron shares roadmap for next five years
Recently, Micron Technology launched a groundbreaking 128GB DDR5-8000 RDIMM memory module, utilizing a single 32Gb chip. As reported by Tom’s Hardware, Micron also unveiled its product roadmap for the next five years, sharing its vision for the future of high-performance and high-capacity storage technologies. This includes some technologies that have not been publicly discussed before.
Micron aims to continue its advancements in HBM (High Bandwidth Memory) and GDDR (Graphics Double Data Rate) memory in the coming years. The company has already introduced the industry’s first HBM3 Gen2 with more than 1.2 TB/s bandwidth and over 9.2 GB/s pin speed, featuring an 8-layer vertical stack and a 24GB capacity. This product is likely what is indicated as HBM3E on their roadmap. The HBM3E from Micron is expected to debut in early 2024, likely making its first appearance in Nvidia’s next-generation GPUs aimed at AI and HPC. Furthermore, Micron is preparing a 12-layer vertical stack single-die 36GB HBM3E chip, set for a 2025 release.
A more significant shift will occur with HBM4, slated for a 2026 launch. This memory stack will feature a 2048-bit interface, with bandwidth exceeding 1.5 TB/s. Micron plans to introduce products with capacities ranging from 36GB to 48GB and 12/16-layer vertical stacks between 2026 and 2027. By 2028, the HBM4E is expected to arrive, offering further enhanced frequencies, capacities increasing from 48GB to 64GB, and bandwidth exceeding 2 TB/s.
The next iteration in GDDR technology, GDDR7, is anticipated to arrive by the end of 2024, featuring data I/O rates reaching 32 Gbps and capacities between 16Gb and 24Gb. By the end of 2026, individual chip capacities are expected to exceed 24Gb, with speeds increasing to 36 Gbps.
Micron anticipates offering 128GB to 256GB MCR DIMM memory modules with data transfer rates of 8800 MT/s in 2025, followed by modules with capacities exceeding 256GB and data rates climbing to 12800 MT/s in 2026 or 2027. Concurrently, Micron is set to release memory modules supporting CXL 2.0 with capacities ranging from 128GB to 256GB and bandwidth reaching 36 GB/s, followed by modules supporting CXL 3.x with capacities exceeding 256GB and bandwidth surpassing 72 GB/s.
For low-power applications, LPDDR (Low Power Double Data Rate) memory continues to be the industry standard. Micron’s LPDDR5X, with speeds of 8533 MT/s or 9600 MT/s, will remain in use for some time. Starting in 2025, Micron plans to offer LPCAMM2 memory based on LPDDR design, with speeds of 8533 MT/s and capacities ranging from 16GB to 128GB. By mid-2026, products with speeds of 9600 MT/s and capacities exceeding 192GB are expected to be available.