Samsung begins mass production of 14nm EUV DDR5 DRAM
Samsung announced that it has begun mass production of DDR5 DRAM using the 14nm process of EUV (Extreme Ultraviolet) technology. With the support of this process, 14nm EUV DDR5 DRAM has the highest wafer density in the industry. Compared with the previous generation product, the productivity has increased by about 20%, and the power consumption has also been reduced by 20%. Samsung said that this product is very suitable for use in AI and 5G workloads, and these markets are growing.
Last year, Samsung began shipping the industry’s first DRAM manufactured with EUV technology. This time it has increased the number of EUV layers to five layers, using today’s most advanced DRAM technology to provide the best DDR5 solution. Samsung is also the only manufacturer in the industry that has achieved a differentiated process technology for 14nm DRAM through the application of EUV multilayer technology. Samsung plans to improve the performance and yield of DRAM through EUV technology to gain an advantage in the competition of 14nm or below DRAM.
At present, the maximum speed of Samsung DDR5 memory has reached 7.2 Gbps, which is more than twice that of DDR4 memory (3.2 Gbps), and it is still improving. In the future, Samsung will mass-produce 24Gb DRAM to meet the needs of the large-capacity data market. Samsung hopes to create a set of DDR5 memory product lines through different technical means to adapt to different market segments.
