TSMC N3E node is progressing smoothly
TSMC is currently developing multiple processes on the N3 process node, including N3, N3B, and N3E. Last year, Wei Zhejiang, president of TSMC, said that the N3 process node still uses the structure of FinFET transistors. When it is launched, it will become the most advanced PPA and transistor technology in the industry, and it will also be another large-scale mass-produced and durable process node for TSMC.
According to TechPowerup, a recent report from Morgan Stanley indicated that N3E, which expands on the basis of N3, has been prepared in advance, and the process flow may be determined by the end of this month. TSMC originally planned to mass-produce the N3 process node in the second half of 2022. As a simplified version of the 3nm process, the N3E will be mass-produced in the second half of 2023. Due to the high yield rate during N3E test production, TSMC hopes to achieve commercialization earlier, possibly as early as the second quarter of 2023.
It is understood that N3E reduces the number of EUV mask layers on the basis of N3, from 25 layers to 21 layers, and the logic density is 8% lower, but it is still 60% higher than the N5 process node. In addition, N3E has a higher yield than N3B, which is rumored to be an improved version of N3 developed for use by some customers, but there is currently a lack of relevant information. Neither N3E nor N3B is used to replace N3, but to give customers more choices and better performance and power consumption on different products.
