SK Hynix announced last year that it has successfully developed the world’s first LPDDR5X memory integrated with the HKMG process, which is manufactured using a 1αnm process and has begun to be introduced to the market. SK Hynix announced last year that it has successfully developed the world’s first LPDDR5X memory integrated with the HKMG process, which is manufactured using a 1αnm process and has begun to be introduced to the market.
According to The Elec, the reason for this DRAM production accident was that the zirconium (Zr) high-k material provided by SK Trichem contained impurities, which caused some production equipment at the SK Hynix DRAM factory to stop operating. SK Hynix said that the accident did not cause production loss because it immediately arranged cleaning and other measures to deal with it.
SK Hynix stated that it is conducting a necessary review of the interruption of equipment production and replacement of parts caused by SK Trichem, and will demand compensation from SK Trichem in accordance with the terms of the contract. At present, SK Hynix has suspended the procurement of materials from SK Trichem until the problem is resolved.
In order to cope with the production in the future, the high-k materials required by SK Hynix are temporarily supplied by UP Chemical and M Chemical.
SK Trichem stated that the cause of the accident was a problem with the purity of the high-k materials it provided, which led to an increase in the pressure on some equipment, resulting in a shutdown. The high-k material belongs to the precursor material and is deposited on the atomic level of the DRAM capacitor. Since the capacitor directly determines the performance of the DRAM, the quality of the high-k material is very important. At present, SK Trichem is still providing materials for other equipment of the same production line of SK Hynix and plans to resume supply to SK Hynix by the end of this month to provide products that meet the quality requirements.