Previously, Micron announced its NAND flash memory plan, saying that it will launch the industry’s first 232-layer 3D TLC NAND flash memory, and is preparing to start production of the flash memory chip in late 2022, which will be used in various products including solid-state drives. Recently, another large storage company, Western Digital, also announced its own NAND flash memory plan.
In fact, at the beginning of last year, Western Digital and Kioxia announced the cooperation to develop the sixth-generation 162-layer BiCS Flash. According to Kioxia at the time, compared with the fifth-generation technology, the horizontal cell array density of the sixth-generation technology has increased by 10%. Combined with 162-layer stacked vertical memory, the chip size can be reduced by 40% compared with 112-layer stacking technology. By adopting an array CMOS circuit layout and four-way simultaneous operation, the performance is improved by nearly 2.4 times compared to the previous generation, and the read latency is improved by 10%. I/O performance is also improved by 66%.