ISSCC 2022 will be held on February 24, and many manufacturers will choose to showcase the latest semiconductor manufacturing technologies at this conference. Among them, SK Hynix will
introduce its latest HBM3 memory technology, with a bandwidth of 896 GB/s, and GDDR6 with a rate of 27 Gbps.
SK Hynix has been very active in the research and development of HBM memory. As early as last June, it demonstrated the first HBM3 memory, which provided a bandwidth of 665 GB/s. Then in October last year, SK Hynix announced that it had successfully developed HBM3 memory, becoming the first company in the world to develop a new generation of HBM memory.
SK Hynix offers two capacities, one is 24GB vertically stacked with 12-layer through-silicon via technology, and the other is 16GB stacked with 8-layers. These HBM3 memories deliver 819 GB/s of bandwidth, compared to 460 GB/s of the previous generation HBM2E, a 78% increase in bandwidth. In addition, HBM3 memory also has built-in on-chip error correction technology, which improves the reliability of the product.
The HBM3 memory brought by SK Hynix this time still uses 12-layer through-silicon via technology, with a maximum capacity of 24GB, but the bandwidth has been increased to 896 GB/s, and it is said to use automatic calibration and machine learning optimization technology. It is unclear whether these HBM3 memories from SK Hynix are in the prototype stage or are intended for mass production.
In addition, SK Hynix will also showcase GDDR6 with a rate of 27 Gbps, which uses a T-coil circuit structure to achieve higher transfer speeds, faster than Samsung’s highest 24 Gbps product.
