SK Hynix Speeds Up HBM Development, Aims for Annual Iteration

In response to the significant increase in demand for semiconductors used in artificial intelligence (AI), SK Hynix has previously decided to expand the production capacity of its core AI infrastructure products, such as the next-generation DRAM, HBM3E. Concurrently, SK Hynix has also signed a Memorandum of Understanding (MOU) with TSMC, agreeing to closely collaborate on the production of next-generation HBM products and the enhancement of advanced packaging technology that integrates HBM with the logic layer, aiming to develop the sixth generation of HBM products, namely HBM4.

SK Hynix HBM3E mass production

Although the mass production of HBM4 is still two years away, SK Hynix is accelerating the development of the seventh-generation HBM products. According to etnews, Kim Kwi-wook, head of SK Hynix’s Advanced HBM Technology Team, shared the development direction of the next-generation HBM at the recent “IMW 2024” event. He indicated that current HBM technology has reached a new level, and the generational iteration cycle is speeding up, shifting from the previous two-year cycle to an annual one starting with HBM3E.

The industry’s high demand for high-bandwidth memory has compelled SK Hynix to expedite its HBM projects. The first batch of 12-layer stacked HBM4 is expected to arrive as early as the second half of next year, with 16-layer stacked products anticipated by 2026. These will not only utilize MR-MUF technology but will also evolve towards greater customization, with HBM4E projected to debut as early as 2026. This is the first time SK Hynix has mentioned HBM4E, confirming the existence of the new standard, rumored to offer 1.4 times the bandwidth of its predecessor.