SK Hynix launches the world’s first HBM3 memory
SK Hynix announced today that they have successfully developed HBM3 DRAM memory and are the first company in the world to develop a new generation of HBM memory. This is the fourth generation of HBM series memory (HBM2E is also considered a generation). The new HBM3 not only provides higher bandwidth but also stacks more layers of DRAM to increase capacity.
SK Hynix only started mass production of HBM2E memory in July last year, and now it has launched HBM3. The research and development progress is still quite fast, which can further consolidate their leading position in the market. SK Hynix’s HBM3 can provide two capacities, one is 24GB with 12-layer Through Silicon Via (TSV) technology vertical stacking, and the other is 16GB with 8-layer stacking.
In terms of performance, SK Hynix’s HBM3 can provide a bandwidth of 819GB/s, which is 460GB/s compared to the previous generation HBM2E, which is a 78% increase in bandwidth. NVIDIA’s A100 computing card currently uses 6 HBM2E as video memory, which can provide a bandwidth of 2TB/s. After switching to HBM3, the bandwidth can be as high as 4.9TB/s, and the maximum video memory capacity can reach 144GB.
Compared with HBM2E, HBM3 memory also has built-in on-chip error correction technology, which significantly improves the reliability of the product. It is expected that HBM3 will be mainly used in high-performance data centers and mechanical learning platforms to improve the level of artificial intelligence and the performance of supercomputers, which can be used for climate change analysis and drug development.