SK hynix announced
that it has successfully developed the fastest mobile DRAM: LPDDR5T (Low Power Double Data Rate 5 Turbo). In November last year, SK hynix launched the world’s first LPDDR5X
memory integrated with HKMG (High-K Metal Gate) process, which is manufactured using 1αnm (fourth generation 10nm level) process, and this time LPDDR5T is a further performance improvement on this basis.
LPDDR5T combines the characteristics of high speed and low power consumption. It operates in the ultra-low voltage range of 1.01V to 1.12V set by JEDEC. It also integrates the HKMG process and plans to use the 1αnm process to achieve the best performance. Compared with the previous LPDDR5X memory, the speed of LPDDR5T has increased by 13%, reaching 9.6 Gbps. In order to emphasize its high-speed characteristics, “T” is added as a suffix at the end of the specification name when naming.
SK Hynix plans to provide customers with LPDDR5T memory samples in the near future, which are packaged with a capacity of 16GB and a data processing speed of 77GB/s, and will eventually promote mass production of the product in the second half of the year. In SK hynix’s view, after launching the 8.5 Gbps LPDDR5 memory, it broke through the technical limitations again only two months later, providing customers with products with various capacities, which can further consolidate its leading position in the DRAM market.
SK Hynix believes that before the next-generation LPDDR6 comes out, LPDDR5T memory, which greatly widens the technological gap, can dominate the market and can meet the growing demand for high-speed, high-capacity, low-power consumption, and other configurations of high-performance memory. The application range of LPDDR5T memory is not limited to smartphones, but can also be extended to artificial intelligence (AI), machine learning (ML), and augmented/virtual reality (AR/VR).