Samsung has developed the industry’s highest performing UFS 4.0 storage solution
In addition to further improving the data access efficiency of smartphones and increasing the computing performance on the terminal device, Samsung also claims to be able to drive self-driving, augmented reality, and virtual reality computing performance through UFS 4.0 storage components.
In Samsung’s UFS 4.0 storage element design, its 7th generation V-NAND vertical memory is used, with a patented controller, this corresponds to a continuous reading speed of 4200MB per second and a continuous writing speed of 2800MB per second, which reduces the power consumption by 46% compared to the UFS 3.1 specification. It means that the standby time of smartphones will be greatly increased.
At present, the UFS 4.0 storage element proposed by Samsung will be built with a maximum volume of 11mm x 13mm x 1mm. The storage capacity can reach up to 1TB, and it is expected to enter mass production in the third quarter of this year. If there is no accident, it will be widely used in the high-end mobile phone products launched by the end of the year or next year.